IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB260NPBF
• Description: MOSFET N-CH 200V 56A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4220pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 56 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 29 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB260NPBF

IRFB260NPbF
100000
1000.00
10000
4
100.00
1000
10.00
100
10
1.00
0.10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
0.5
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
T J = 25°C
1.0
Crss
Ciss
Coss
f = 1 MHZ
100
1.5
V GS = 0V
SHORTED
1000
2.0
1000
100
Fig 8. Maximum Safe Operating Area
10
12
10
1
7
5
2
0
0
Fig 6. Typical Gate Charge Vs.
1
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
Gate-to-Source Voltage
34A
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
30
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
60
V
V
V
DS
DS
DS
= 160V
= 100V
= 40V
90
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100
120
100µsec
10msec
1msec
1000
150