STB50N25M5 STMicroelectronics, STB50N25M5 Datasheet

MOSFET N-CH 250V 28A D2PAK

STB50N25M5

Manufacturer Part Number
STB50N25M5
Description
MOSFET N-CH 250V 28A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB50N25M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1700pF @ 50V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10024-2
Features
Application
Description
MDmesh™ V is a revolutionary Power MOSFET
technology, that combines an innovative
proprietary vertical process with
STMicroelectronics’s well known PowerMESH™
horizontal layout structure. The resulting product
has an extremely low on-resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Table 1.
June 2009
STB50N25M5
Amongst the best R
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Switching applications
STB50N25M5
Type
Order code
Device summary
250 V
V
DS(on)
DSS
* area
< 0.065 Ω
R
max
DS(on)
50N25M5
Marking
N-channel 250 V, 0.055 Ω, 28 A, D
Doc ID 15923 Rev 1
28 A
I
D
Figure 1.
MDmesh™ V Power MOSFET
Package
D²PAK
Internal schematic diagram
D²PAK
STB50N25M5
1
3
Tape and reel
Packaging
www.st.com
2
PAK
1/13
13

Related parts for STB50N25M5

STB50N25M5 Summary of contents

Page 1

... Table 1. Device summary Order code STB50N25M5 June 2009 N-channel 250 V, 0.055 Ω MDmesh™ V Power MOSFET R DS(on max < 0.065 Ω Figure 1. Marking 50N25M5 Doc ID 15923 Rev 1 STB50N25M5 3 1 D²PAK Internal schematic diagram Package Packaging D²PAK Tape and reel 2 PAK 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 15923 Rev 1 STB50N25M5 . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB50N25M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not-repetitive I AR (pulse width limited by T Single pulse avalanche energy E AS (starting T ...

Page 4

... Figure 15) Doc ID 15923 Rev 1 Min. Typ 250 =125 ° 100 µ 0.055 Min. Typ. 1700 - 100 171 - 1 while V is rising from 0 oss DS while V is rising from 0 oss DS STB50N25M5 Max. Unit V 1 µA 100 µA 100 Ω 0.065 Max. Unit Ω ...

Page 5

... STB50N25M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current ...

Page 6

... Figure 3. AM03968v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03969v1 temperature Figure 7. AM03977v1 R DS(on) (Ω) 0.07 0.06 0.05 0.04 0. (°C) 100 J Doc ID 15923 Rev 1 STB50N25M5 Thermal impedance Transfer characteristics V =20V Static drain-source on-resistance V =10V AM03970v1 V (V) GS AM03972v1 I (A) D ...

Page 7

... STB50N25M5 Figure 8. Output capacitance stored energy E oss (µJ) 2.5 2.0 1.5 1.0 0.5 0 100 150 0 50 Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on-resistance (V) V =200V =28A Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) I =100µA D 1.10 1.00 0.90 0.80 ...

Page 8

... AM01468v1 Figure 17. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 19. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 15923 Rev 1 STB50N25M5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STB50N25M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15923 Rev 1 Package mechanical data ® 9/13 ...

Page 10

... Package mechanical data Dim 10/13 D2PAK (TO-263) mechanical data m m Min Typ Max ° 0 ° 8 0079457_M Doc ID 15923 Rev 1 STB50N25M5 Min Typ Max ° 0 ° 8 ...

Page 11

... STB50N25M5 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 12.1 P2 1.9 2 0.25 0.35 0.0098 0.0137 W 23.7 24.3 TAPE AND REEL SHIPMENT inch MIN ...

Page 12

... Revision history 6 Revision history Table 8. Document revision history Date 23-Jun-2009 12/13 Revision 1 First release Doc ID 15923 Rev 1 STB50N25M5 Changes ...

Page 13

... STB50N25M5 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords