STB50N25M5 STMicroelectronics, STB50N25M5 Datasheet - Page 6

• Manufacturer Part Number: STB50N25M5
• Description: MOSFET N-CH 250V 28A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB50N25M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10024-2

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
100
0.1
(norm)
(A)
BV
10
I
D
1
0.99
0.97
0.95
1.01
0.93
1.05
1.03
1.07
0.1
(A)
DSS
40
30
20
10
50
I
D
0
-50
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized BV
-25
V
5
GS
1
=10V
10
0
7V
25
Tc=25°C
Tj=150°C
15
Sinlge
pulse
10
50
DSS
20
75
100
vs temperature
25
100
V
30
DS
6V
T
5V
(V)
J
(°C)
Doc ID 15923 Rev 1
100µs
10µs
1ms
10ms
AM03968v1
V
AM03977v1
AM03969v1
DS
(V)
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
0.03
0.07
0.05
0.04
0.06
(A)
(Ω)
40
30
20
10
50
I
D
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on-resistance
2
5
V
DS
10
=20V
4
V
GS
6
15
=10V
8
20
STB50N25M5
10
25
V
I
GS
D
(A)
(V)
AM03970v1
AM03972v1