IXFH160N15T IXYS, IXFH160N15T Datasheet - Page 4

• Manufacturer Part Number: IXFH160N15T
• Description: MOSFET N-CH 150V 160A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXFH160N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0096
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
100
0
0
0.4
3.5
0
f
0.5
= 1 MHz
5
4.0
Fig. 9. Forward Voltage Drop of
0.6
Fig. 7. Input Admittance
T
10
J
= 150ºC
Fig. 11. Capacitance
0.7
4.5
Intrinsic Diode
T
15
V
J
GS
= 150ºC
V
0.8
V
SD
- 40ºC
DS
- Volts
25ºC
5.0
- Volts
20
- Volts
0.9
T
J
25
= 25ºC
1.0
5.5
C oss
C rss
C iss
30
1.1
6.0
1.2
35
1.3
6.5
40
1.00
0.10
0.01
0.00
180
160
140
120
100
80
60
40
20
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
20
D
G
DS
20
Fig. 12. Maximum Transient Thermal
= 25A
= 10mA
0.0001
= 75V
40
Fig. 8. Transconductance
40
60
0.001
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
60
G
80
Impedance
I
- NanoCoulombs
D
- Amperes
0.01
100
80
120
IXFH160N15T
100
0.1
140
T
J
120
= - 40ºC
150ºC
160
25ºC
1
140
180
10
200
160