STW3N150 STMicroelectronics, STW3N150 Datasheet - Page 10
STW3N150
Manufacturer Part Number
STW3N150
Description
MOSFET N-CH 1500V 2.5A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STW3N150.pdf
(15 pages)
Specifications of STW3N150
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
29.3nC @ 10V
Input Capacitance (ciss) @ Vds
939pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 Ohm @ 10 V
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
140000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
Continuous Drain Current Id
1.3A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
6ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6332-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW3N150
Manufacturer:
ST
Quantity:
20 000
Part Number:
STW3N150,W3
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
4
10/15
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
®