IXTH20P50P IXYS, IXTH20P50P Datasheet - Page 4

MOSFET P-CH 500V 20A TO-247

IXTH20P50P

Manufacturer Part Number
IXTH20P50P
Description
MOSFET P-CH 500V 20A TO-247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTH20P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5120pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-20.0
Rds(on), Max, Tj=25°c, (?)
0.450
Ciss, Typ, (pf)
5120
Qg, Typ, (nc)
103
Trr, Typ, (ns)
406
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
-35
-30
-25
-20
-15
-10
100
-60
-50
-40
-30
-20
-10
-5
10
0
0
-3.0
-0.5
0
f
= 1 MHz
-5
-3.5
-1.0
Fig. 9. Forward Voltage Drop of
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-4.0
-1.5
T
Intrinsic Diode
J
-15
= 125ºC
T
J
V
V
V
= 125ºC
GS
SD
DS
- 40ºC
-4.5
25ºC
-2.0
- Volts
-20
- Volts
- Volts
-25
-5.0
-2.5
T
J
= 25ºC
C rss
C iss
C oss
-30
-5.5
-3.0
-35
-6.0
-3.5
-40
-
100.0
-
10.0
-
-
-10
1.0
0.1
40
35
30
25
20
15
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
5
0
0
-
10
0
0
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
10
J
C
V
I
I
R
D
G
= 150ºC
DS
= 25ºC
DS(on)
= - 10A
= -1mA
-5
= -250V
20
Limit
Fig. 8. Transconductance
30
-10
Fig. 10. Gate Charge
Q
40
G
- NanoCoulombs
I
-15
D
V
DS
50
- Amperes
-
100
- Volts
60
-20
DC
70
IXTT20P50P
IXTH20P50P
-25
80
T
J
= - 40ºC
125ºC
90
25ºC
-30
100µs
1ms
10ms
100ms
100
-
1000
110
-35

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