IXFH44N50P IXYS, IXFH44N50P Datasheet - Page 2

MOSFET N-CH 500V 44A TO-247

IXFH44N50P

Manufacturer Part Number
IXFH44N50P
Description
MOSFET N-CH 500V 44A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH44N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
5440pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
32 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
44 A
Power Dissipation
650000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
5440
Qg, Typ, (nc)
98
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
650
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH44N50P
Manufacturer:
IXYS
Quantity:
3 000
Part Number:
IXFH44N50P
Manufacturer:
ST
0
Part Number:
IXFH44N50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
I
IXYS reserves the right to change limits, test conditions, and dimensions.
d(on)
r
d(off)
f
rr
fs
RM
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
TO-264 (IXFK) Outline
Test Conditions
V
V
V
R
V
(TO-247)
(TO-264)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, -di/dt = 100 A/µs
= 20 V; I
= 3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
= 100V, V
S
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
GS
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= I
(T
(T
D25
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
20
Characteristic Values
Characteristic Values
5440
Typ.
0.15
Typ.
0.21
639
0.6
6.0
32
40
28
29
85
27
98
35
30
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
200
0.19° C/W
110
1.5
44
° C/W
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µC
ns
S
A
A
V
A
IXFH44N50P IXFK 44N50P
TO-247 (IXFH) Outline
TO-268 (IXFT) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
6,727,585
6,759,692
6,771,478 B2
3 - Source
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
IXFT 44N50P
3
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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