IXFH76N07-12 IXYS, IXFH76N07-12 Datasheet

MOSFET N-CH 70V 76A TO-247AD

IXFH76N07-12

Manufacturer Part Number
IXFH76N07-12
Description
MOSFET N-CH 70V 76A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH76N07-12

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
70V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
3.4V @ 4mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Forward Transconductance Gfs (max / Min)
40 s
Drain-source Breakdown Voltage
70 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
76 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
70
Id(cont), Tc=25°c, (a)
76
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
4400
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH76N07-12
Manufacturer:
IXYS
Quantity:
15 500
Price:
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
D119
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
AS
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C (Chip capability = 125 A)
= 119°C, limited by external leads
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
G
, V
= 40 A
= 2 W
DS
= 0
TM
GS
= 10 kW
Family
DD
N06
N07
T
T
76 N06/N07-11
76 N06/N07-12
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
N06
N07
N06
N07
min.
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
2.0
60
70
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
typ.
1.15/10 Nm/lb.in.
±20
±30
304
100
360
175
300
60
70
60
70
76
76
30
2
5
6
max.
±100
100
500
3.4
11
12
V/ns
mW
mW
mJ
nA
mA
mA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
V
V
V
J
g
TO-247 AD
G = Gate,
S = Source,
Features
Applications
Advantages
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
60 V
60 V
70 V
70 V
V
DSS
DS (on)
HDMOS
D = Drain,
TAB = Drain
76 A 11 mW
76 A 12 mW
76 A 11 mW
76 A 12 mW
I
D25
TM
process
92785H (12/98)
(TAB)
R
DS(on)
1 - 4

Related parts for IXFH76N07-12

IXFH76N07-12 Summary of contents

Page 1

... V DSS DS DSS DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 TM Family Maximum Ratings N06 60 N07 N06 ...

Page 2

... J min. typ. max. 76 304 JM 1.5 = 25°C 150 125°C 250 ns J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFH 76 N07-11 IXFH 76 N07-12 TO-247 AD (IXFH) Outline ...

Page 3

... V = 15V GS 0.9 0 100 150 I - Amperes D Fig vs. Case Temperature -50 - Case Temperature - © 2000 IXYS All rights reserved IXFH 76 N06-11 IXFH 76 N06-12 300 7V 6V 250 200 150 5V 100 50 1.5 2.0 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 200 250 300 100 125 150 ° ...

Page 4

... V - Volts DS Fig. 11 Transient Thermal Impedance D=0.5 0.100 D=0.2 D=0.1 D=0.05 D=0.02 0.010 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXFH 76 N06-11 IXFH 76 N06-12 1000 100 10 250 300 350 200 f = 1MHz 150 C iss 100 C oss C rss 30 40 ...

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