IXFK200N10P IXYS, IXFK200N10P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFK200N10P
Manufacturer Part Number
IXFK200N10P
Description
MOSFET N-CH 100V 200A TO-264
Specifications of IXFK200N10P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
830W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
830 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
830
Rthjc, Max, (ºc/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Polar
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
© 2006 IXYS All rights reserved
DSS
DGR
GS
GSM
AR
AS
D
SOLD
C
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque TO-264
Mounting force PLUS247
TO-264
PLUS247
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
HiPerFET
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V, V
= V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
D
= 250 μA
= 8 mA
G
= 0.5 I
= 400A
GS
= 4 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
T
J
J
≤ V
= 150°C
= 175°C
IXFK 200N10P
IXFX 200N10P
DSS
JM
,
20
100
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +150
120/45 26 Nm/lb.in
Maximum Ratings
Typ.
5.5
0.9/6 Nm/lb.in
100
100
±20
±30
200
400
100
830
175
300
260
75
60
10
10
6
4
±100
500
Max.
5.0
2.5
7.5
25
V/ns
mΩ
mΩ
mA
mJ
nA
μA
°C
°C
°C
°C
°C
μA
W
V
V
V
V
A
A
A
A
V
V
g
J
g
TO-264 (IXFK)
PLUS247 (IXFX)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G = Gate
S = Source
V
I
R
t
D25
rr
DS(on)
DSS
G
D
D
= 100 V
= 200 A
≤ ≤ ≤ ≤ ≤ 7.5 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 150 ns
S
S
D = Drain
Tab = Drain
DS99590E(03/06)
D (TAB)
TAB
Related parts for IXFK200N10P
IXFK200N10P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 400A GS D Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFK 200N10P IXFX 200N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 200 75 400 JM 60 100 4 ≤ DSS 830 -55 ...
... PLUS 247 TM (IXFX) Outline Terminals Gate 2 - Drain (Collector Source (Emitter Drain (Collector) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... Volts D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 2.4 2.2 2 1.8 1.6 1 15V GS 1.2 1 0.8 0 100 150 200 I - Amperes D © 2006 IXYS All rights reserved C 350 300 250 8V 200 150 7V 100 1.2 1.4 1.6 C 2.4 2 1.8 1.6 7V 1.4 1.2 ...
... T = 150 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100,000 f = 1MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 7 º 1.2 1.4 1.6 1000 C iss C oss 100 C rss ...
... © 2006 IXYS All rights reserved illis IXFK 200N10P IXFX 200N10P ...
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