IXTK120N25P IXYS, IXTK120N25P Datasheet - Page 4

MOSFET N-CH 250V 120A TO-264

IXTK120N25P

Manufacturer Part Number
IXTK120N25P
Description
MOSFET N-CH 250V 120A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTK120N25P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
8000pF @ 25V
Power - Max
700W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
8700
Qg, Typ, (nc)
185
Trr, Typ, (ns)
200
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK120N25P
Manufacturer:
IXYS
Quantity:
768
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
210
180
150
120
350
300
250
200
150
100
100
90
60
30
50
0
0
0.2
4
0
f = 1MH z
4.5
0.4
5
T
J
T
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 150
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
J
5
-40
= 150
10
25
0.6
º
º
º
C
C
5.5
C
º
V
C
V
15
V
G S
S D
0.8
DS
6
- V olts
- V olts
20
- V olts
T
6.5
J
1
= 25
C oss
C rs s
C is s
25
º
7
C
1.2
30
7.5
1.4
35
8
8.5
1.6
40
1000
100
110
100
10
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
1
0
0
10
0
R
T
V
I
I
D
G
T
T
20
J
DS(on)
DS
J
C
= 60A
= 10m A
= -40
Fig. 8. Trans conductance
150
= 175
= 25
30
= 125V
25
40
º
Lim it
º
Fig. 10. Gate Char ge
º
C
º
C
Fig. 12. Forw ar d-Bias
C
Safe Ope r ating Ar e a
º
C
C
Q
60
60
D C
G
I
- nanoCoulombs
80
V
D
D S
90
- A mperes
100 120 140 160 180 200
IXTK 120N25P
100
- V olts
120
150
1m s
100µs
10m s
25µs
180
1000
210

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