IXFH12N100 IXYS, IXFH12N100 Datasheet
IXFH12N100
Manufacturer Part Number
IXFH12N100
Description
MOSFET N-CH 1KV 12A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH10N100.pdf
(4 pages)
Specifications of IXFH12N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.05
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
122
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH12N100
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH12N100F
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH12N100F
Manufacturer:
FSC
Quantity:
30 000
Part Number:
IXFH12N100F
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFH12N100P
Manufacturer:
SHARP
Quantity:
30 000
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2004 IXYS All rights reserved
DM
GSS
D25
AR
DSS
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
D
DSS
DS(on)
d
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
V
I
T
C
C
C
C
S
C
GS
DS
GS
DS
GS
J
J
GS
J
≤ I
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
rr
, di/dt ≤ 100 A/µs, V
GS
, HDMOS
, I
D
D
DC
D
= 3 mA
= 4 mA
DSS
, V
= 0.5 • I
G
= 2 Ω
DS
= 0
TM
D25
GS
Family
= 1 MΩ
T
T
DD
J
J
(T
≤ V
= 25°C
= 125°C
10N100
12N100
J
= 25°C, unless otherwise specified)
DSS
,
JM
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 10 N100 1000 V
IXFH/IXFM 12 N100 1000 V
10N100
12N100
10N100
12N100
10N100
12N100
1000
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
1000
1000
±20
±30
300
150
300
10
12
40
48
10
12
30
5
max.
±100
1.20
1.05
250
4.5
1
V/ns
mA
mJ
nA
µA
°C
°C
°C
°C
Ω
Ω
V
V
W
V
V
V
V
A
A
A
A
A
A
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
Features
Applications
Advantages
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
t
rr
V
≤ ≤ ≤ ≤ ≤ 250 ns
DSS
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
10 A 1.20 Ω Ω Ω Ω Ω
12 A 1.05 Ω Ω Ω Ω Ω
I
D25
TM
G
DS91531F(01/04)
process
R
DS(on)
(TAB)
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IXFH12N100 Summary of contents
Page 1
... 0.8 • V DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFH/IXFM 10 N100 1000 V IXFH/IXFM 12 N100 1000 V Family Maximum Ratings 1000 = 1 MΩ 1000 GS ±20 ±30 10N100 10 12N100 12 10N100 40 JM 12N100 ...
Page 2
... -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 6 10 D25 4000 ...
Page 3
... J 1.4 1.3 1 10V GS 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 12N100 12 10 10N100 -50 - Degrees C C © 2004 IXYS All rights reserved V = 10V 15V 100 125 150 IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 Fig. 2 Input Admittance 25° ...
Page 4
... D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 100 125 150 15 20 0.001 0.01 Time - Seconds ...