IXFK240N15T2 IXYS, IXFK240N15T2 Datasheet - Page 4

• Manufacturer Part Number: IXFK240N15T2
• Description: MOSFET N-CH 150V 240A TO264
• Manufacturer: IXYS
• Series: GigaMOS™r
• Type: GigaMOS Trench T2 HiperFetr

Specifications of IXFK240N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 460nC @ 10V
• Input Capacitance (ciss) @ Vds: 32000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Product: MOSFET Gate Drivers
• Rise Time: 125 ns
• Fall Time: 145 ns
• Supply Current: 120 A
• Maximum Power Dissipation: 1250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 145 ns
• Maximum Turn-on Delay Time: 125 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 240 A
• Output Voltage: 150 V
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 240
• Rds(on), Max, Tj=25°c, (?): 0.0052
• Ciss, Typ, (pf): 32000
• Qg, Typ, (nc): 460
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
200
180
160
140
120
100
320
280
240
200
160
120
1.0
0.1
80
60
40
20
80
40
0
0
3.0
0.2
0
f
= 1 MHz
0.3
5
3.5
0.4
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
4.0
0.5
Fig. 11. Capacitance
T
15
J
Intrinsic Diode
= 150ºC
T
J
V
V
0.6
V
= 150ºC
SD
GS
DS
4.5
- Volts
20
- Volts
- Volts
0.7
25
C iss
C oss
C rss
5.0
0.8
25ºC
T
J
30
= 25ºC
0.9
- 40ºC
5.5
35
1.0
6.0
1.1
40
1,000.0
100.0
10.0
400
350
300
250
200
150
100
1.0
0.1
10
50
9
8
7
6
5
4
3
2
1
0
0
0
0
1
V
I
I
R
T
T
Single Pulse
D
G
DS
DS(on)
External Lead Limit
J
C
50
20
= 120A
= 10mA
= 175ºC
= 25ºC
= 75V
Fig. 12. Forward-Bias Safe Operating Area
Limit
100
40
150
Fig. 8. Transconductance
60
10
Fig. 10. Gate Charge
Q
200
80
G
I
- NanoCoulombs
D
V
- Amperes
DS
250
100
- Volts
300
120
IXFK240N15T2
IXFX240N15T2
100
DC
350
140
25µs
100µs
1ms
10ms
100ms
T
IXYS REF:F_240N15T2(8V)9-11-09
J
400
160
= - 40ºC
150ºC
25ºC
450
180
1,000
500
200