2SJ377(TE16R1,NQ) Toshiba, 2SJ377(TE16R1,NQ) Datasheet - Page 3
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2SJ377(TE16R1,NQ)
Manufacturer Part Number
2SJ377(TE16R1,NQ)
Description
MOSFET P-CHAN 60V 5A 2-7J1B
Manufacturer
Toshiba
Datasheet
1.2SJ377TE16R1NQ.pdf
(6 pages)
Specifications of 2SJ377(TE16R1,NQ)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
190 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
630pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
2-7J1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SJ377NQTR
As a result of reliability check, we confirmed that there is no problem.
I
V
MIN:
h
V
MIN: 70
CBO
CB
FE(1)
CE
=100V
=1V
500
400
300
200
100
1E-10
1E-11
1E-5
1E-6
1E-7
1E-8
1E-9
0
1E-11
0
Reliability data (Extract) Representative product type 2SC3303
Temperature Cycle Test
信頼性確認データ (抜粋) 代表品種 2SC3303
温度サイクル試験
1E-10
100
Initial
Initial
1E-9
200
1E-8
I
MAX: 1
IC=1A
MAX: 240
E
300
=0
UNIT
UNIT
1E-7
400
1E-6
: UA
:
1E-5
500
I
V
MIN:
V
I
MIN:
EBO
EB
CE(sat)
C
=3A
=7V
1E-10
1E-6
1E-7
1E-8
1E-9
0.8
0.6
0.4
0.2
1
0
1E-10
0
0.2
1E-9
Initial
Initial
0.4
1E-8
I
MAX: 1
I
MAX: 0.4
C
B
0.6
=0
=0.15A
UNIT
UNIT
1E-7
0.8
: UA
: V
1E-6
1
V
I
MIN:
(BR)CEO
C
=10mA
150
130
110
90
70
50
80
50
70
Initial
90
I
MAX:
B
110
=0
UNIT
130
: V
150