2SK3562(Q) Toshiba, 2SK3562(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3562(Q)
• Description: MOSFET N-CH 600V 6A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3562(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 400 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3562Q

100
0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 20 V
PULSE TEST
COMMON
SOURCE
Tc = 25°C
PULSE TEST
GATE-SOURCE VOLTAGE V
DRAIN CURRENT I
2
2
100
15
4
⎪Y
4
I
I
D
D
4.8
fs
– V
– V
100
⎪ – I
Tc = −55°C
1
Tc = −55°C
DS
25
GS
5
6
10
D
6
6
COMMON SOURCE
V DS = 20 V
PULSE TEST
D
GS
(A)
V GS = 4 V
DS
8
8
25
4.4
4.6
4.2
(V)
(V)
10
10
10
3
0.1
10
10
10
8
6
4
2
0
8
6
4
2
0
1
0.1
0
0
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
COMMON SOURCE
Tc = 25°C
PULSE TEST
10,15
10
DRAIN CURRENT I
4
5.2
R
V
20
DS (ON)
8
I
DS
V GS = 10 V､15V
D
– V
5
– V
1
DS
GS
4.8
– I
30
12
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25℃
PULSE TEST
D
I D = 6 A
D
4.6
GS
(A)
DS
V GS = 4 V
1.5
16
40
4.4
3
2010-01-29
2SK3562
4.2
(V)
(V)
50
20
10