2SK3562(Q) Toshiba, 2SK3562(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3562(Q)
• Description: MOSFET N-CH 600V 6A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3562(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 400 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3562Q

10000
1000
100
10
50
40
30
20
10
−80
5
4
3
2
1
0
1
0
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
40
V GS = 10 V
CAPACITANCE – V
0
1
R
80
DS (ON)
P
D
40
3
– Tc
5
– Tc
120
3
80
10
DS
I D = 6A
DS
160
1.5
120
30 50
C rss
C oss
C iss
(V)
160
200
100
4
400
500
300
200
100
0.5
0.3
0.1
10
0
5
3
1
5
4
3
2
1
0
−80
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
PULSE TEST
−0.2
−40
10
Tc = 25°C
DYNAMIC INPUT / OUTPUT
10
V DS
CHARACTERISTICS
5
−0.4
0
3
V DD = 100 V
I
20
DR
V
V GS
th
200
−0.6
1
– V
40
– Tc
400
DS
30
V GS = 0, −1 V
−0.8
COMMON SOURCE
I D = 6 A
Tc = 25°C
PULSE TEST
80
g
DS
40
(nC)
120
−1
(V)
2010-01-29
2SK3562
−1.2
160
50
20
16
12
8
4
0