2SK2953(F) Toshiba, 2SK2953(F) Datasheet - Page 5
2SK2953(F)
Manufacturer Part Number
2SK2953(F)
Description
MOSFET N-CH 600V 15A 2-16F1B
Manufacturer
Toshiba
Datasheet
1.2SK2953F.pdf
(6 pages)
Specifications of 2SK2953(F)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3520pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
2-16F1B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
90000 mW
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK2953(F)
2SK2953F
2SK2953F
R
V
G
DD
5
= 25 Ω
= 90 V, L = 7.98 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
2SK2953
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠