BSS223PW L6327 Infineon Technologies, BSS223PW L6327 Datasheet - Page 3

• Manufacturer Part Number: BSS223PW L6327
• Description: MOSFET P-CH 20V 390MA SOT-323
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSS223PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 390mA
• Vgs(th) (max) @ Id: 1.2V @ 1.5µA
• Gate Charge (qg) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 56pF @ 15V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.39 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS223PW; BSS223PWINTR; BSS223PWL6327; BSS223PWL6327XT; BSS223PWXT; BSS223PWXTINTR; BSS223PWXTINTR; SP000245423

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Preliminary data
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-0.31A
=-0.39A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-10V, I
=-10V, I
=0 to -4.5V
=-10V, I
=0, I
ç 2*çI
Conditions
F
DS
=-0.39
D
F
D
D
D
ç*R
=-15V,
|
G
GS
=-0.39A
=-0.39A,
=-0.39A
=
=6
DS(on)max
|l
=-4.5V,
D
|,
min.
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.04
typ.
-0.4
-0.5
-2.2
0.7
3.8
5.1
3.2
7.6
1.1
45
21
17
-1
5
-
-
BSS 223PW
2002-07-04
max.
-0.05 nC
-0.62
-0.39 A
-1.56
-1.33 V
-0.5
-2.7
5.7
7.5
7.6
4.8
9.5
1.4
56
26
22
-
Unit
S
pF
ns
V
ns
nC