AO3414 Alpha & Omega Semiconductor Inc, AO3414 Datasheet - Page 3

• Manufacturer Part Number: AO3414
• Description: MOSFET N-CH 20V 4.2A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3414

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 436pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1009-2

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
120
100
100
16
16
12
12
Rev 7: July 2010
Rev 7: July 2010
80
80
60
60
40
40
8
8
4
4
0
0
120
100
80
60
40
0
0
0
0
0
Figure 5: On-Resistance vs. Gate-Source Voltage
4.5V
4.5V
Figure 3: On-Resistance vs. Drain Current and
Figure 1: On-Region Characteristics
Figure 1: On-Region Characteristics
1
1
2.5V
2.5V
3
3
2
25°
V
V
Gate Voltage
2
2
DS
DS
V
(Volts)
(Volts)
GS
I
V
V
D
6
6
GS
GS
(A)
(Volts)
4
=1.8V
=1.8V
3
3
125°C
V
V
V
V
GS
GS
GS
GS
=2.5V
=2.5V
=4.5V
=4.5V
V
V
9
9
GS
GS
6
4
4
=1.5V
=1.5V
2V
2V
I
D
www.aosmd.com
www.aosmd.com
=3A
12
12
5
5
8
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1.6
1.6
1.4
1.4
1.2
1.2
0.8
0.8
16
16
12
12
1
1
8
8
4
4
0
0
12
-50
-50
0.0
0
0
V
V
DS
DS
Figure 4: On-Resistance vs. Junction Temperature
-25
-25
=5V
=5V
Figure 6: Body-Diode Characteristics
Figure 2: Transfer Characteristics
Figure 2: Transfer Characteristics
0.2
125°C
0.5
0.5
0
0
125°C
125°C
25
25
0.4
V
V
I
I
D
D
V
V
V
GS
GS
=2.8A
=2.8A
1
1
GS
GS
Temperature (°C)
SD
=2.5V
=2.5V
50
50
(Volts)
(Volts)
(Volts)
25°
0.6
V
V
I
I
D
D
75
75
25°C
25°C
GS
GS
=2.5A
=2.5A
1.5
1.5
=1.8V
=1.8V
100 125 150 175
100 125 150 175
0.8
V
V
I
I
AO3414
D
D
2
2
GS
GS
=3A
=3A
1.0
=4.5V
=4.5V
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Page 3 of 5
1.2
2.5
2.5