AO3420 Alpha & Omega Semiconductor Inc, AO3420 Datasheet - Page 4

• Manufacturer Part Number: AO3420
• Description: MOSFET N-CH 20V 6A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3420

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 630pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1014-2

AO3420
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
0.1
10
0.01
5
4
3
2
1
0
1
0.1
0.1
10
0.00001
0
1
R
limited
T
DS(ON)
J(Max)
Figure 9: Maximum Forward Biased Safe
V
I
D
=150°C, T
Figure 7: Gate-Charge Characteristics
DS
=6A
=10V
2
D=T
T
R
J,PK
θJA
0.0001
DC
Operating Area (Note E)
=90°C/W
on
=T
A
1
V
I
=25°C
/T
D
DS
=3.8A
A
+P
=15V
4
V
DM
Qg (nC)
DS
.Z
(Volts)
θJA
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
.R
Single Pulse
θJA
6
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10µs
100µs
1ms
10ms
100m
1s
8
0.01
100
Pulse Width (s)
10
0.1
1400
1200
1000
800
600
400
200
20
15
10
5
0
0.001
0
0
Figure 10: Single Pulse Power Rating Junction-to-
C
rss
C
0.01
Figure 8: Capacitance Characteristics
1
C
oss
iss
5
P
D
0.1
T
Ambient (Note E)
Pulse Width (s)
on
C
10
oss
V
C
T
DS
rss
(Volts)
10
1
100
10
T
T
J(Max)
A
=25°C
15
270
1.7
3.6
=150°C
13
100
1000
1000
20