PMF370XN,115 NXP Semiconductors, PMF370XN,115 Datasheet

MOSFET N-CH 30V 870MA SOT-323

PMF370XN,115

Manufacturer Part Number
PMF370XN,115
Description
MOSFET N-CH 30V 870MA SOT-323
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of PMF370XN,115

Package / Case
SC-70-3, SOT-323-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
440 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
870mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.65nC @ 4.5V
Input Capacitance (ciss) @ Vds
37pF @ 25V
Power - Max
560mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.44 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
0.87 A
Power Dissipation
560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057727115
PMF370XN T/R
PMF370XN T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMF370XN,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PMF370XN,115
Quantity:
3 000
Company:
Part Number:
PMF370XN,115
Quantity:
8 824
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Static characteristics
R
D
DS
tot
DSon
PMF370XN
N-channel TrenchMOS extremely low level FET
Rev. 03 — 20 June 2008
Low conduction losses due to low
on-state resistance
Saves PCB space due to small footprint
(40 % smaller than SOT23)
Surface-mounted package
Driver circuits
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Quick reference
Conditions
T
T
see
T
V
T
10
j
sp
sp
j
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; V
= 25 °C; see
Figure 1
= 4.5 V; I
j
and
≤ 150 °C
D
GS
= 0.2 A;
Figure 9
Figure 2
= 4.5 V;
3
Low threshold voltage
Suitable for low gate drive sources
Switching in portable appliances
and
Min
-
-
-
-
Product data sheet
Typ
-
-
-
370
Max
30
0.87
0.56
440
Unit
V
A
W

Related parts for PMF370XN,115

PMF370XN,115 Summary of contents

Page 1

PMF370XN N-channel TrenchMOS extremely low level FET Rev. 03 — 20 June 2008 1. Product profile 1.1 General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PMF370XN SC-70 plastic surface-mounted package; 3 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... NXP Semiconductors 120 I der (%) 100 × 100 % der 25°C ) Fig 1. Normalized continuous drain current as a function of solder point temperature Limit R (A) DSon 25° single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMF370XN_3 Product data sheet ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance th(j-sp) from junction to solder point th(j-sp) (K/W) δ 0.2 0.1 0.05 0.02 10 single pulse Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol ...

Page 5

... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance iss C output capacitance oss C reverse transfer rss capacitance t turn-on delay time d(on) t rise time r t turn-off delay time ...

Page 6

... NXP Semiconductors (th) (V) 1.5 max 1 typ min 0.5 0 − 0.25 A Fig 7. Gate-source threshold voltage as a function of junction temperature 1 V ( DSon (Ω) 0.8 0.6 0.4 0 0 25°C j Fig 9. Drain-source on-state resistance as a function of drain current; typical values PMF370XN_3 Product data sheet ...

Page 7

... NXP Semiconductors GS(pl) V GS(th GS1 GS2 G(tot) Fig 11. Gate charge waveform definitions (pF − 0V Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMF370XN_3 Product data sheet N-channel TrenchMOS extremely low level FET ( 003aaa508 I D Fig 12. Gate-source voltage as a function of gate charge ...

Page 8

... NXP Semiconductors 7. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 Fig 15. Package outline SOT323 (SC-70) PMF370XN_3 Product data sheet N-channel TrenchMOS extremely low level FET ...

Page 9

... NXP Semiconductors 8. Soldering 0.6 2.35 (3×) 0.55 (3×) Fig 16. SOT323 (SC-70) PMF370XN_3 Product data sheet N-channel TrenchMOS extremely low level FET 2.65 1.85 1.325 2 3 1.3 0.5 1 (3×) Rev. 03 — 20 June 2008 PMF370XN solder lands solder resist solder paste occupied area ...

Page 10

... Revision history Document ID Release date PMF370XN_3 20080620 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate PMF370XN_2 20051206 PMF370XN-01 20040211 PMF370XN_3 ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 12. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Legal information ...

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