AO4407A Alpha & Omega Semiconductor Inc, AO4407A Datasheet

MOSFET P-CH -30V -12A 8-SOIC

AO4407A

Manufacturer Part Number
AO4407A
Description
MOSFET P-CH -30V -12A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4407A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 12A, 20V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1022-2

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.3mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4407A uses advanced trench technology to
provide excellent R
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
D
A
D
D
Top View
D
A
G
DS(ON)
S
B
T
T
T
T
S
A
A
A
A
=25° C
=70° C
=25° C
=70° C
SOIC-8
, and ultra-low low gate charge
S
C
G
A
A
A
=25° C unless otherwise noted
Bottom View
Steady State
Steady State
t ≤ 10s
G
V
V
I
I
I
E
P
T
D
DM
AR
J
DS
GS
AR
D
Symbol
Symbol
, T
R
R
STG
JA
JL
Product Summary
V
I
R
R
R
100% UIS Tested
100% Rg Tested
D
DS
DS(ON)
DS(ON)
DS(ON)
= -12A
Typ
32
60
17
= -30V
-55 to 150
< 11m (V
< 13m (V
< 17m (V
Maximum
30V P-Channel MOSFET
±25
101
-30
-12
-10
-60
-26
3.1
2.0
G
(V
Max
GS
40
75
24
GS
GS
GS
= -20V)
= -20V)
= -10V)
= -6V)
AO4407A
D
S
www.aosmd.com
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A

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AO4407A Summary of contents

Page 1

... General Description The AO4407A uses advanced trench technology to provide excellent R , and ultra-low low gate charge DS(ON) with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View Absolute Maximum Ratings T Parameter Drain-Source Voltage Gate-Source Voltage T =25° ...

Page 2

... AO4407A Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 -10V - (Volts) DS Figure 1: On-Region Characteristics =- =-10V GS V =-20V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -5V -4. -3. 1.8 1.6 1.4 1.2 1.0 0.8 I =-6.5A, dI/dt=100A/ s ...

Page 4

... AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V =-12A (nC) g Figure 7: Gate-Charge Characteristics 100 limited DS(ON) 0.1 T =150° C J(Max) T =25° 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =75° C 0.1 0.01 Single Pulse 0.001 0.00001 ...

Page 5

... AO4407A G ate C harge Test C ircuit & W aveform - Vds Vgs Rg Vgs L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs -10V - Vds Resistive Switching Test Circuit & Waveforms RL t Vgs - DUT Vdd VDC + Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms ...

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