IPD30N03S4L-14 Infineon Technologies, IPD30N03S4L-14 Datasheet
IPD30N03S4L-14
Specifications of IPD30N03S4L-14
IPD30N03S4L-14TR
SP000275919
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IPD30N03S4L-14 Summary of contents
Page 1
... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.1 Product Summary DS(on),max I D Marking 4N03L14 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 ° =25 °C tot stg page 1 IPD30N03S4L- 13 PG-TO252-3-11 Value Unit 120 ± -55 ... +175 °C 55/175/56 2008-04-18 ...
Page 2
... Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =10 µA GS(th = DSS T =25 ° = =125 ° = =85 ° = GSS =4 =15 A DS( page 2 IPD30N03S4L-14 Values min. typ. max 4 1.0 1 1000 = 100 - 16.1 20.5 - 11.2 13.6 Unit K µ 2008-04-18 ...
Page 3
... plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 4.9K/W the chip is able to carry 38A at 25°C. For detailed information thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD30N03S4L-14 Values min. typ. max. - 750 = 190 - = 2 0.6 0. Unit 980 pF 250 20 - ...
Page 4
... parameter 1000 100 Rev. 2.1 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD30N03S4L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-18 ...
Page 5
... DS 7 Typ. transfer characteristics parameter 120 100 Rev. 2.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 20 -55 °C 25 °C 175 ° -60 [V] page 5 IPD30N03S4L- ° 100 T [° 100 140 180 2008-04-18 ...
Page 6
... V SD Rev. 2.1 10 Typ. capacitances 100 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 °C 0.1 0.8 1 1.2 1.4 [V] page 6 IPD30N03S4L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-18 ...
Page 7
... Typical avalanche energy parameter 7 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 2.1 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD30N03S4L- -55 - 105 T [° 145 Q gate 2008-04-18 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 8 IPD30N03S4L-14 2008-04-18 ...
Page 9
... Revision History Version Revision 2.1 Rev. 2.1 Date 18.04.2008 page 9 IPD30N03S4L-14 Changes Update of type and marking in table on page one 2008-04-18 ...