FDFS2P753Z Fairchild Semiconductor, FDFS2P753Z Datasheet - Page 4
![MOSFET P-CH 30V 3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDFS2P753Z
Manufacturer Part Number
FDFS2P753Z
Description
MOSFET P-CH 30V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDFS2P753Z.pdf
(7 pages)
Specifications of FDFS2P753Z
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
115 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.3nC @ 10V
Input Capacitance (ciss) @ Vds
455pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
115mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P753ZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDFS2P753Z
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDFS2P753Z Rev.A
Typical Characteristics
16
12
16
12
8
4
0
1.6
1.4
1.2
1.0
0.8
0.6
8
4
0
Figure 3. Normalized On-Resistance
Figure 1.
-75
1
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
-50
V
= -10V
-V DS , DRAIN TO SOURCE VOLTAGE (V)
I
D
GS
vs Junction Temperature
-V
= -3A
T
= -10V
GS
2
1
J
-25
, JUNCTION TEMPERATURE
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
0
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
3
2
T
J
25
= 150
µ
V
V
V
V
s
GS
GS
GS
GS
= -4.5V
o
= -3.5V
= -5V
= -4V
50
C
T
4
3
T
J
J
= 25°C unless otherwise noted
= -55
75
o
C
100 125 150
(
µ
o
4
5
T
C
s
J
)
= 25
o
C
5
6
4
1E-3
0.01
0.1
450
400
350
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
10
50
1
0.2
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
3
Figure 6.
V
GS
-V
V
GS
SD
= 0V
-V
= 3.5V
4
, BODY DIODE FORWARD VOLTAGE (V)
T
GS
0.4
J
Normalized On-Resistance
= 150
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
T
I
D
Source Voltage
4
J
Source to Drain Diode
= -3A
-I D , DRAIN CURRENT(A)
= 25
5
o
C
V
o
T
GS
C
J
0.6
= 150
= 4V
6
o
8
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
C
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
0.8
7
V
V
GS
GS
= -4.5V
= -10V
T
T
8
12
J
J
= 25
= -55
1.0
www.fairchildsemi.com
V
GS
o
o
C
9
C
= -5V
µ
µ
s
s
1.2
16
10