IRFR3707TRPBF International Rectifier, IRFR3707TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR3707TRPBF
• Description: MOSFET N-CH 30V 61A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3707TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1990pF @ 15V
• Power - Max: 87W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR3707PBFTR; IRFR3707TRPBF; IRFR3707TRPBFTR

IRFR/U3707PbF
4
1000
3000
2500
2000
1500
1000
100
500
0.1
10
1
0
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 175 C
J
V
V
SD
DS
0.6
Forward Voltage
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
GS
iss
rss
oss
C oss
C rss
C iss
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
1.0
+ C
+ C
J
10
f = 1MHz
gd ,
gd
°
C
ds
1.4
V
SHORTED
GS
= 0 V
1.8
100
1000
100
10
10
8
6
4
2
0
1
0
Fig 8. Maximum Safe Operating Area
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
OPERATION IN THIS AREA LIMITED
24.8A
Gate-to-Source Voltage
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
BY R
20
10
DS(on)
V
DS
www.irf.com
= 15V
30
10us
100us
1ms
10ms
100
40