IRF7862TRPBF International Rectifier, IRF7862TRPBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF7862TRPBF
Manufacturer Part Number
IRF7862TRPBF
Description
MOSFET N-CH 30V 21A 8-SOIC
Manufacturer
International Rectifier
Specifications of IRF7862TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
45nC @ 4.5V
Input Capacitance (ciss) @ Vds
4090pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
21 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
30 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7862TRPBFTR
Available stocks
Part Number:
IRF7862TRPBF
Part Number:
IRF7862TRPBF
Applications
l
l
Benefits
l
l
l
l
l
l
www.irf.com
Notes through
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
100% tested for Rg
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 9
at 4.5V V
Parameter
Parameter
GS
f
g
GS
GS
@ 10V
@ 10V
V
30V
DSS
G
S
S
S
1
2
3
4
Top View
3.3m @V
Typ.
–––
–––
R
DS(on)
-55 to + 150
HEXFET
8
6
5
7
IRF7862PbF
Max.
0.02
± 20
170
2.5
1.6
30
21
17
D
D
D
A
D
A
GS
max
Max.
= 10V 30nC
®
20
50
Power MOSFET
SO-8
Qg
Units
Units
W/°C
°C/W
06/04/09
°C
W
V
A
1
Related parts for IRF7862TRPBF
IRF7862TRPBF Summary of contents
Applications Synchronous MOSFET for Notebook l Processor Power Synchronous Rectifier MOSFET for l Isolated DC-DC Converters Benefits Very Low DS(on) Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage l and Current 20V V Max. Gate ...
IRF7862PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) ...
PULSE WIDTH Tj = 25°C 100 10 1 0.1 2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150°C ...
IRF7862PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss ...
Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 0. ...
IRF7862PbF 125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER ...
D.U.T + • • - • + - R • • • SD • Fig 17 D.U. ≤ 1 ≤ 0.1 % Fig 18a. Switching Time Test Circuit www.irf.com Driver Gate Drive ...
IRF7862PbF SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 ...
SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...
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