IRF7862TRPBF International Rectifier, IRF7862TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7862TRPBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7862TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4090pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7862TRPBFTR

IRF7862PbF
6
R G
20V
V DS
Fig 14. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
12
10
8
6
4
2
t p
2
I AS
D.U.T
0.01 Ω
L
3
V GS, Gate -to -Source Voltage (V)
4
and Waveform
15V
5
T J = 25°C
DRIVER
6
+
- V DD
7
A
I
AS
T J = 125°C
8
Id
Fig 16. Gate Charge Waveform
9
Vgs
I D = 21A
10 11 12
t p
Qgodr
V
(BR)DSS
Qgd
1600
1400
1200
1000
800
600
400
200
0
0
Qgs2
25
Fig 13. Maximum Avalanche Energy
Vgs(th)
Vds
Qgs1
Fig 15. Gate Charge Test Circuit
Starting T J , Junction Temperature (°C)
50
20K
1K
vs. Drain Current
75
S
DUT
100
TOP
BOTTOM 16A
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L
125
I D
1.0A
1.4A
VCC
150