STD38NH02LT4 STMicroelectronics, STD38NH02LT4 Datasheet - Page 5

• Manufacturer Part Number: STD38NH02LT4
• Description: MOSFET N-CH 24V 38A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD38NH02LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1070pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3160-2

STD38NH02L - STD38NH02L-1
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
(see
SD
SD
DD
= 19A, V
= 38A, di/dt = 100A/µs,
= 18V, T
Figure
Test conditions
15)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
1.6
27
22
Max.
152
1.3
38
Unit
nC
ns
A
A
V
A
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