IPD70N10S3-12 Infineon Technologies, IPD70N10S3-12 Datasheet

no-image

IPD70N10S3-12

Manufacturer Part Number
IPD70N10S3-12
Description
MOSFET N-CH 100V 70A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD70N10S3-12

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.1 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
4355pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0111 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD70N10S3-12
IPD70N10S3-12TR
SP000427248

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD70N10S3-12
Manufacturer:
FSC
Quantity:
12 400
Part Number:
IPD70N10S3-12
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPD70N10S3-12
0
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD70N10S3-12
®
-T Power-Transistor
1)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
QN1012
stg
T
T
T
I
T
D
C
C
C
C
=35A
page 1
=25°C, V
=100°C, V
=25°C
=25 °C
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
1)
-55 ... +175
55/175/56
Value
280
410
±20
125
70
48
70
PG-TO252-3-11
IPD70N10S3-12
11.1
100
70
2008-04-22
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for IPD70N10S3-12

IPD70N10S3-12 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary Marking QN1012 Symbol Conditions I T =25° =100° =25°C D,pulse =35A =25 °C tot stg page 1 IPD70N10S3-12 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 280 410 70 ±20 125 -55 ... +175 55/175/56 100 V 11 Unit °C 2008-04-22 ...

Page 2

... V V =0V 1mA (BR)DSS =83µA GS(th =80V, V =0V DSS T =25° =80V, V =0V =125° =20V, V =0V GSS =10V, I =70A DS(on page 2 IPD70N10S3-12 Values min. typ. max 1 100 - - 2.0 3.0 4.0 - 0.01 0 100 - - 100 - 9.2 11.1 2008-04-22 Unit K/W V µ ...

Page 3

... R =3 d(off =80V, I =70A 10V plateau =25° S,pulse V =0V, I =70A =25° =50V /dt =100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPD70N10S3-12 Values min. typ. max. - 3350 4355 - 940 1222 - 105 - =10V 5 0 100 - 265 Unit pF 158 - 280 1 ...

Page 4

... parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD70N10S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-22 ...

Page 5

... Typ. transfer characteristics parameter 250 200 150 100 Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5. [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 25 -55 ° °C 15 175 ° -60 [V] page 5 IPD70N10S3- ° 100 T [° 6 100 120 140 180 2008-04-22 ...

Page 6

... Rev. 1.0 10 Typ. capacitances 400 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD70N10S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-22 ...

Page 7

... A 200 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD70N10S3- -55 - 105 T [° 145 Q gate 2008-04-22 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD70N10S3-12 2008-04-22 ...

Page 9

... Revision History Version Rev. 1.0 Date page 9 IPD70N10S3-12 Changes 2008-04-22 ...

Related keywords