SPB21N50C3 Infineon Technologies, SPB21N50C3 Datasheet - Page 10
SPB21N50C3
Manufacturer Part Number
SPB21N50C3
Description
MOSFET N-CH 560V 21A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPB21N50C3.pdf
(12 pages)
Specifications of SPB21N50C3
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 13.1A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
208W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
208000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
Q2088067
SP000013833
SPB21N50C3
SPB21N50C3INTR
SPB21N50C3XT
SP000013833
SPB21N50C3
SPB21N50C3INTR
SPB21N50C3XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB21N50C3
Manufacturer:
Infineon Technologies
Quantity:
1 850
Part Number:
SPB21N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
SPB21N50C3
Definition of diodes switching characteristics
2005-11-07
Rev. 2.3
Page 10