IRFR224TRPBF Vishay, IRFR224TRPBF Datasheet

MOSFET N-CH 250V 3.8A DPAK

IRFR224TRPBF

Manufacturer Part Number
IRFR224TRPBF
Description
MOSFET N-CH 250V 3.8A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR224TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR224PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224TRPBF
Manufacturer:
Vishay/Siliconix
Quantity:
45 245
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224TRPBF
Manufacturer:
NXP
Quantity:
2 500
Price:
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91271
S10-1122-Rev. B, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 3.8 A, dI/dt ≤ 90 A/μs, V
= 50 V; starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 14 mH, R
G
c
D S
a
a
DD
b
V
≤ V
GS
e
DPAK (TO-252)
SiHFR224-GE3
IRFR224PbF
SiHFR224-E3
IRFR224
SiHFR224
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
250
2.7
7.8
14
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
IRFR224, IRFU224, SiHFR224, SiHFU224
1.1
GS
AS
at 10 V
= 3.8 A (see fig. 12).
T
T
DPAK (TO-252)
SiHFR224TR-GE3
IRFR224TRPbF
SiHFR224T-E3
IRFR224TR
SiHFR224T
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224, SiHFR224)
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
Definition
a
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
DPAK (TO-252)
SiHFR224TRL-GE3
IRFR224TRLPbF
SiHFR224TL-E3
IRFR224TRL
SiHFR224TL
GS
DS
AS
AR
D
D
stg
design,
a
a
- 55 to + 150
a
a
LIMIT
0.020
260
± 20
0.33
250
130
3.8
2.4
3.8
4.2
2.5
4.8
15
42
low
Vishay Siliconix
d
IPAK (TO-251)
SiHFU224-GE3
IRFU224PbF
SiHFU224-E3
IRFU224
SiHFU224
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRFR224TRPBF

IRFR224TRPBF Summary of contents

Page 1

... The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU, SiHFU series) is for through-hole S mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. N-Channel MOSFET DPAK (TO-252) SiHFR224TR-GE3 a IRFR224TRPbF a SiHFR224T-E3 a IRFR224TR a SiHFR224T = 25 °C, unless otherwise noted ° ...

Page 2

... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91271 S10-1122-Rev. B, 10-May-10 IRFR224, IRFU224, SiHFR224, SiHFU224 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91271 S10-1122-Rev. B, 10-May-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91271 S10-1122-Rev. B, 10-May-10 IRFR224, IRFU224, SiHFR224, SiHFU224 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91271. Document Number: 91271 S10-1122-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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