BSC079N03SG Infineon Technologies, BSC079N03SG Datasheet - Page 7

• Manufacturer Part Number: BSC079N03SG
• Description: MOSFET N-CH 30V 40A TDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC079N03SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 2230pF @ 15V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC079N03SGINTR; BSC079N03SGXT; BSC079N03SGXTINTR; BSC079N03SGXTINTR; SP000016414

Rev. 1.91
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
125 °C
10
20
t
T
AV
100 °C
j
60
[°C]
[µs]
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=20 A pulsed
g s
5
10
Q
Q
gate
g
Q
sw
[nC]
Q
15
g d
BSC079N03S G
6 V
20
24 V
Q
15 V
g ate
2009-10-27
25