IPP100N10S3-05 Infineon Technologies, IPP100N10S3-05 Datasheet - Page 2

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IPP100N10S3-05

Manufacturer Part Number
IPP100N10S3-05
Description
MOSFET N-CH 100V 100A T0220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N10S3-05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.1 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 240µA
Gate Charge (qg) @ Vgs
176nC @ 10V
Input Capacitance (ciss) @ Vds
11570pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000407126

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N10S3-05
Manufacturer:
INFINEON
Quantity:
4 000
Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=80 V, V
=80 V, V
=0 V, I
=20V, V
=10V, I
=10V, I
2
Conditions
cooling area
GS
, I
2)
D
D
D
D
= 1 mA
DS
=240µA
=100A
=100A,
GS
GS
=0V
=0 V,
=0 V,
3)
IPI100N10S3-05, IPP100N10S3-05
min.
100
2.0
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
3.0
4.3
4.0
1
-
-
-
-
-
-
IPB100N10S3-05
max.
100
100
0.5
4.0
5.1
4.8
62
62
40
1
-
2008-02-11
Unit
K/W
V
µA
nA
m

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