IPP100N10S3-05 Infineon Technologies, IPP100N10S3-05 Datasheet - Page 4

• Manufacturer Part Number: IPP100N10S3-05
• Description: MOSFET N-CH 100V 100A T0220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N10S3-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 176nC @ 10V
• Input Capacitance (ciss) @ Vds: 11570pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000407126

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
300
250
200
150
100
10
50
1
0
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0; SMD
≥ 6 V
50
1
T
V
C
DS
100
[°C]
[V]
10
1 ms
150
100 µs
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
100
10
10
10
= f(t
10
10
80
60
40
20
0
-1
-2
-3
1
0
C
10
); V
0
p
0.01
-6
0.5
0.05
0.1
)
single pulse
GS
IPI100N10S3-05, IPP100N10S3-05
10
≥ 6 V; SMD
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB100N10S3-05
10
-2
150
10
2008-02-11
-1
200
10
0