MTP2P50EG ON Semiconductor, MTP2P50EG Datasheet
MTP2P50EG
Manufacturer Part Number
MTP2P50EG
Description
MOSFET P-CH 500V 2A TO220AB
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.MTP2P50EG.pdf
(7 pages)
Specifications of MTP2P50EG
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1183pF @ 25V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
6Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±20V
Drain Current (max)
2A
Power Dissipation
75W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MTP2P50EGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTP2P50EG
Manufacturer:
ON Semiconductor
Quantity:
950
Part Number:
MTP2P50EG
Manufacturer:
ON/安森美
Quantity:
20 000
MTP2P50E
Power MOSFET
2 Amps, 500 Volts
P−Channel TO−220
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 6
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec
L
This high voltage MOSFET uses an advanced termination scheme
Fast Recovery Diode
Robust High Voltage Termination
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Diode is Characterized for Use in Bridge Circuits
I
This is a Pb−Free Device*
DD
= 4.0 Apk, L = 10 mH, R
DSS
− Continuous
− Non−Repetitive (t
− Junction−to−Case
− Junction−to−Ambient
= 100 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
J
= 25°C
Specified at Elevated Temperature
= 10 Vdc,
GS
p
≤ 10 ms)
(T
= 1.0 MW)
G
C
= 25 W)
= 25°C unless otherwise noted)
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
J
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
qJC
qJA
GS
D
D
AS
D
L
stg
−55 to 150
Value
1.67
62.5
± 20
± 40
500
500
260
2.0
1.6
6.0
0.6
75
80
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
MTP2P50EG
1
2
Device
3
2 AMPERES, 500 VOLTS
MTP2P50E = Device Code
A
Y
WW
G
ORDERING INFORMATION
4
G
CASE 221A
TO−220AB
http://onsemi.com
R
STYLE 5
DS(on)
TO−220AB
(Pb−Free)
Package
P−Channel
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
AND PIN ASSIGNMENT
MARKING DIAGRAM
Publication Order Number:
= 6 W
Gate
S
1
2P50EG
AYWW
Drain
Drain
MTP
50 Units/Rail
4
2
Shipping
MTP2P50E/D
3
Source
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MTP2P50EG Summary of contents
Page 1
... 0.6 W/° −55 to 150 °C J stg °C/W R 1.67 qJC R 62.5 qJA T 260 °C L Device MTP2P50EG 1 http://onsemi.com 2 AMPERES, 500 VOLTS DS(on) P−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain 4 TO−220AB MTP CASE 221A 2P50EG STYLE 5 AYWW Gate Source 2 Drain MTP2P50E = Device Code ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 500 Vdc Vdc 500 Vdc, ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS 25° 3.5 3 2.5 2 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...
Page 4
Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
Page 5
TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...
Page 6
SINGLE PULSE T = 25° 100 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...
Page 7
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...