MTP2P50EG ON Semiconductor, MTP2P50EG Datasheet - Page 6

• Manufacturer Part Number: MTP2P50EG
• Description: MOSFET P-CH 500V 2A TO220AB
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of MTP2P50EG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1183pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 6Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 2A
• Power Dissipation: 75W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTP2P50EGOS

0.01
0.1
10
1
0.1
0.01
0.1
V
SINGLE PULSE
T
1.0E-05
Figure 11. Maximum Rated Forward Biased
1
GS
C
= 25°C
= 20 V
0.1
0.2
D = 0.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
1
Safe Operating Area
0.01
0.02
1.0E-04
0.05
R
THERMAL LIMIT
PACKAGE LIMIT
10
DS(on)
100 ms
LIMIT
1 ms
10 ms
Figure 14. Diode Reverse Recovery Waveform
100
I
1.0E-03
S
SAFE OPERATING AREA
10 ms
dc
Figure 13. Thermal Response
http://onsemi.com
t
p
1000
6
di/dt
t
t, TIME (s)
a
1.0E-02
P
(pk)
80
60
40
20
t
rr
0
t
DUTY CYCLE, D = t
25
b
I
S
Figure 12. Maximum Avalanche Energy versus
0.25 I
t
1
t
2
S
T
J
Starting Junction Temperature
, STARTING JUNCTION TEMPERATURE (°C)
50
1.0E-01
1
/t
2
TIME
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
- T
C
1.0E+00
= P
100
(pk)
qJC
1
R
qJC
(t)
125
I
D
= 2 A
1.0E+01
150