SPW11N60C3 Infineon Technologies, SPW11N60C3 Datasheet

MOSFET N-CH 650V 11A TO-247

SPW11N60C3

Manufacturer Part Number
SPW11N60C3
Description
MOSFET N-CH 650V 11A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPW11N60C3

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013728
SPW11N60C3
SPW11N60C3IN
SPW11N60C3X
SPW11N60C3XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPW11N60C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPW11N60C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPW11N60C3
Quantity:
5 100
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.6
T
T
Gate source voltage static
C
C
V
V
DD
DD
4)
G
t
p
T
j ma x
P
T
T
jmax
j ma x
E
V
V
P
AR
GS
GS
tot
V
DS
T
15
jmax
G
8 4 16

Related parts for SPW11N60C3

SPW11N60C3 Summary of contents

Page 1

Gate source voltage static Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 jmax ...

Page 2

wavesoldering Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134-A R thJC R thJA V (BR)DSS ...

Page 3

Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate to source charge Gate to drain charge 4 I <=I , di/dt<=400A/us DClink Identical low-side and high-side switch. ...

Page 4

Inverse diode direct current, pulsed Reverse recovery time Reverse recovery charge Peak reverse recovery current Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 5

T C Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 6

Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 7

max V DS max di/ Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 8

Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134-A dv/ ...

Page 9

(BR)DSS j Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 10

iss C oss C rss Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134-A C oss ...

Page 11

G Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 12

Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 13

New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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