SPW11N60C3 Infineon Technologies, SPW11N60C3 Datasheet - Page 12
SPW11N60C3
Manufacturer Part Number
SPW11N60C3
Description
MOSFET N-CH 650V 11A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPW11N60C3.pdf
(13 pages)
Specifications of SPW11N60C3
Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013728
SPW11N60C3
SPW11N60C3IN
SPW11N60C3X
SPW11N60C3XK
SPW11N60C3
SPW11N60C3IN
SPW11N60C3X
SPW11N60C3XK
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPW11N60C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPW11N60C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
1 6
Rev. 2.6
P
8 4 16
2
Please note the new package dimensions arccording to PCN 2009-134-A