FDMS2734 Fairchild Semiconductor, FDMS2734 Datasheet - Page 4

MOSFET N-CH 250V 2.8A POWER56

FDMS2734

Manufacturer Part Number
FDMS2734
Description
MOSFET N-CH 250V 2.8A POWER56
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of FDMS2734

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
122 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
2365pF @ 100V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
122 Ohms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS2734TR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS2734
Manufacturer:
FSC
Quantity:
21 400
Company:
Part Number:
FDMS2734
Quantity:
12 000
Company:
Part Number:
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FDMS2734 Rev.C1
Typical Characteristics
0.001
0.01
10
0.1
8
6
4
2
0
4
3
2
1
Figure 7.
0.01
40
10
1
0
0.1
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11. Forward Bias Safe
T
J
= 125
Switching Capability
V
Gate Charge Characteristics
t
DS
AV
8
o
Operating Area
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
Q
1
C
Unclamped Inductive
, TIME IN AVALANCHE(ms)
J
A
T
g
DS(on)
JA
= MAX RATED
= 25
, GATE CHARGE(nC)
= 125
V
DD
o
C
=75V
o
C/W
16
10
0.1
T
J
= 25°C unless otherwise noted
V
DD
T
24
= 175V
J
100
= 25
V
DD
o
= 125V
C
1 ms
10 ms
100 ms
1 s
10 s
DC
0.5
32
1000
4
3000
1000
100
1000
3000
10
15
12
100
0.1
9
6
3
0
10
Figure 10.
0.1
10
25
1
Figure 12.
-3
f = 1MHz
V
R
Figure 8.
GS
Current vs Case Temperature
T
JC
= 0V
V
= 1.6
10
DS
T
V
50
-2
C
GS
SINGLE PULSE
Power Dissipation
, DRAIN TO SOURCE VOLTAGE (V)
Maximum Continuous Drain
to Source Voltage
o
, CASE TEMPERATURE
C/W
= 10V
t, PULSE WIDTH (s)
Single Pulse Maximum
Capacitance vs Drain
V
10
1
GS
-1
75
= 6V
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
0
I = I
V
100
GS
25
= 10V
10
10
o
C
C
( o
1
C DERATE PEAK
C
150 T
----------------------- -
iss
oss
rss
C
125
)
125
www.fairchildsemi.com
10
A
T
A
2
= 25
o
100
150
C
10
3

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