FDPF12N50T Fairchild Semiconductor, FDPF12N50T Datasheet

MOSFET N-CH 500V 11.5A TO-220F

FDPF12N50T

Manufacturer Part Number
FDPF12N50T
Description
MOSFET N-CH 500V 11.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF12N50T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1315pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.9 A
Power Dissipation
165 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
• R
• Low gate charge ( Typ. 22nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G
rss
D
= 0.55Ω (Typ.)@ V
( Typ. 11pF)
S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
G
C unless otherwise noted*
= 25
D
S
o
C)
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP12N50
FDP12N50
11.5
1.33
0.75
62.5
165
6.9
0.5
46
-55 to +150
16.7
11.5
500
±30
456
300
4.5
S
D
FDPF12N50
FDPF12N50
11.5 *
6.9 *
62.5
46 *
3.0
0.3
42
UniFET
-
June 2007
www.fairchildsemi.com
switching
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

Related parts for FDPF12N50T

FDPF12N50T Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50 / FDPF12N50 Rev. A Description = 6A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP12N50 FDP12N50 FDPF12N50 FDPF12N50 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics 10 8 6.5 V 6 0.1 0.05 0 ,Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation vs. Drain Current ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature J Figure 9-1. Maximum Safe Operating Area - FDP12N50 100 10 1 Operation in This Area is ...

Page 5

Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP12N50 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E Figure 11-2. Transient Thermal Response Curve - FDPF12N50 5 0.5 1 0.2 0.1 0.05 ...

Page 6

FDP12N50 / FDPF12N50 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

...

Page 8

FDP12N50 / FDPF12N50 Rev www.fairchildsemi.com ...

Page 9

Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50 / FDPF12N50 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ e-Series™ Build it Now™ GTO™ CorePLUS™ i-Lo™ ...

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