FDPF39N20 Fairchild Semiconductor, FDPF39N20 Datasheet - Page 3

MOSFET N-CH 200V 39A TO-220F

FDPF39N20

Manufacturer Part Number
FDPF39N20
Description
MOSFET N-CH 200V 39A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Type
Power MOSFETr
Datasheet

Specifications of FDPF39N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 19.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2130pF @ 25V
Power - Max
37W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
39A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
66mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.056 Ohms
Forward Transconductance Gfs (max / Min)
28.5 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
39 A
Power Dissipation
37 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.066Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDP39N20 / FDPF39N20 Rev. B
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
2
1
0
10
4000
2000
Drain Current and Gate Voltage
-1
Top :
Bottom :
0.14
0.12
0.10
0.08
0.06
0.04
0
10
-1
0
10.0 V
15.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
C
V
oss
25
iss
rss
DS
V
, Drain-Source Voltage [V]
DS
10
, Drain-Source Voltage [V]
0
10
I
D
0
V
, Drain Current [A]
GS
50
= 10V
75
C
C
C
iss
oss
rss
10
= C
= C
= C
* Notes :
10
1
gs
gd
ds
1. 250
2. T
V
* Note : T
1
+ C
+ C
GS
C
100
gd
gd
= 20V
= 25
μ
(C
* Note :
s Pulse Test
ds
1. V
2. f = 1 MHz
o
J
C
= shorted)
= 25
GS
o
= 0 V
C
125
3
10
10
10
12
10
10
10
10
8
6
4
2
0
2
1
0
2
1
0
0
0.2
2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
10
Variation vs. Source Current
150
25
4
o
o
150
C
C
0.6
Q
V
o
V
20
C
and Temperatue
SD
G
GS
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
25
0.8
o
C
V
V
6
V
DS
DS
DS
30
= 40V
= 100V
= 160V
1.0
-55
o
C
40
8
1.2
* Notes :
* Note : I
1. V
2. 250
1.4
* Notes :
50
1. V
2. 250
GS
μ
= 0V
s Pulse Test
DS
D
10
= 39A
μ
= 40V
s Pulse Test
1.6
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60
1.8
12

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