FDA33N25 Fairchild Semiconductor, FDA33N25 Datasheet

MOSFET N-CH 250V 33A TO-3PN

FDA33N25

Manufacturer Part Number
FDA33N25
Description
MOSFET N-CH 250V 33A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA33N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
94 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
46.8nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
245W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.094 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
33 A
Power Dissipation
245 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDA33N25 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDA33N25
N-Channel MOSFET
250V, 33A, 0.094Ω
Features
• R
• Low gate charge ( Typ. 36nC)
• Low C
• Fast switching
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.088Ω ( Typ.)@ V
( Typ. 35pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-3PN
D
T
= 16.5A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
24.6
1.96
250
±30
132
918
245
300
0.51
0.24
4.5
S
33
21
D
33
40
September 2007
UniFET
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDA33N25 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA33N25 Rev. A Description = 16.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 33A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA33N25 Rev. A Package Reel Size TO-3PN - unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 4000 C iss = oss = oss C rss = C gd 3000 C iss 2000 1000 C rss 0 0 Drain-Source Voltage [V] DS FDA33N25 Rev. A Figure 2. Transfer Characteristics 200 100 10 *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 500 100 20V ...

Page 4

... Limited by R DS(on) *Notes: 0 Single Pulse 0. Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDA33N25 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250 µ 0.0 100 150 200 -100 Figure 10. Maximum Drain Current ...

Page 5

... FDA33N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA33N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA33N25 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA33N25 Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...

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