FDA33N25 Fairchild Semiconductor, FDA33N25 Datasheet - Page 3

• Manufacturer Part Number: FDA33N25
• Description: MOSFET N-CH 250V 33A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA33N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 46.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 245W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Power Dissipation: 245 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA33N25 Rev. A
Typical Performance Characteristics
4000
3000
2000
1000
0.25
0.20
0.15
0.10
0.05
100
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.1
Figure 1. On-Region Characteristics
10
1
0.01
0
0.1
0
V
GS
=
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
Drain Current and Gate Voltage
20
DS
DS
C
C
C
, Drain-Source Voltage [V]
iss
,Drain-Source Voltage[V]
oss
rss
I
D
0.1
, Drain Current [A]
40
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
GS
= 10V
*Notes:
60
1. 250
2. T
*Note: T
V
C
1
GS
= 25
µ
(
C ds = shorted
s Pulse Test
= 20V
*Note:
o
1. V
2. f = 1MHz
C
80
10
J
= 25
GS
= 0V
o
C
)
100
10
30
3
200
100
100
500
10
10
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
1
Figure 6. Gate Charge Characteristics
1
8
6
4
2
0
0.0
4
0
V
SD
150
, Body Diode Forward Voltage [V]
150
V
Variation vs. Source Current
10
Q
and Temperature
GS
o
g
o
C
C
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
0.8
V
V
V
6
DS
DS
DS
= 50V
= 125V
= 200V
25
20
25
o
C
o
-55
*Notes:
C
1. V
2. 250
o
*Notes:
1. V
2. 250
C
1.6
*Note: I
DS
8
GS
µ
= 20V
s Pulse Test
µ
30
= 0V
s Pulse Test
D
= 33A
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2.4
10
40