FDPF44N25T Fairchild Semiconductor, FDPF44N25T Datasheet - Page 3

• Manufacturer Part Number: FDPF44N25T
• Description: MOSFET N-CH 250V 44A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF44N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP44N25 / FDPF44N25T Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
10
10
10
6000
5000
4000
3000
2000
1000
2
1
0
10
0
0.10
0.08
0.06
0.04
10
-1
Drain Current and Gate Voltage
Top :
Bottom :
-1
0
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
C
C
C
V
oss
rss
iss
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
50
0
I
0
D
, Drain Current [A]
V
GS
= 10V
75
C
C
C
100
iss
oss
rss
= C
= C
= C
10
10
gs
gd
ds
* Notes :
1
1
* Note : T
+ C
+ C
1. 250
2. T
gd
gd
C
V
* Note :
(C
= 25
GS
μ
125
1. V
2. f = 1 MHz
ds
s Pulse Test
= 20V
J
= shorted)
= 25
o
GS
C
= 0 V
o
C
150
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
12
10
10
10
10
10
10
10
8
6
4
2
0
2
1
0
0
2
1
0
0.2
2
Variation vs. Source Current
and Temperatue
0.4
10
25
o
4
150
C
150
0.6
o
o
C
V
C
V
Q
GS
SD
G
20
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
25
0.8
o
C
6
V
V
V
DS
DS
DS
= 125V
= 200V
= 50V
30
1.0
-55
o
C
8
1.2
40
* Note : I
1.4
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
10
DS
GS
50
D
μ
μ
= 40V
= 0V
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s Pulse Test
s Pulse Test
= 44A
1.6
12
1.8
60