RDN120N25 Rohm Semiconductor, RDN120N25 Datasheet
RDN120N25
Specifications of RDN120N25
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RDN120N25 Summary of contents
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... °C T 150 ch −55 to +150 °C T stg Symbol Limits Rth(ch-c) 3.13 Rth(ch-a) 62.5 RDN120N25 10.0 4.5 φ 3.2 2.8 1.2 1.3 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) Equivalent circuit Drain ∗2 Gate ∗1 ∗1 ESD Protection diode ∗2 Body Diode Source ∗ ...
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... Q 11.0 gd Min. Typ. Max. Unit ∗ − − ∗ − − 169 12A ∗ − − µC di/dt= 100A / µs 0.95 RDN120N25 Unit Conditions ±10 µA = ±30V ⎯ =250µ µA =250V =10V, I =1mA V 4 Ω =6A, V =10V ...
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... Ta= −25°C 10 Ta=25°C Ta=75°C 5 Ta=125° 0.5 0.2 0.05 0.1 0.2 0 DRAIN CURRENT : I (A) D Fig.8 Forward Transfer Admittance vs. Drain Current RDN120N25 100 =10V V DS Pulsed 10 Ta=125°C Ta=75°C Ta=25°C 1 Ta= −25°C 0.1 0. GATE-SOURCE VOLTAGE : V (V) GS Fig ...
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... Single pulse 0.001 10µ 100µ 1m 10m 100m 1 10 PULSE WIDTH : PW (S) Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width RDN120N25 1000 Ta=25° dt=100A / µs = Pulsed 100 10 0 100 REVERSE DRAIN CURRENT : I (A) DR Fig.12 Reverse Recovery Time vs. Reverse Drain Current Rev ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...