Transistors 10V Drive Nch MOS FET RDN120N25 Structure Silicon N-channel MOS FET Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching Packaging specifications Package Bulk Type Code Basic ordering unit (pieces) ...
Transistors Electrical characteristics (Ta=25°C) Symbol Parameter Gate-Source Leakage V Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off ...
Transistors Electrical characteristic curves 100 =25° Single Pulse 10 Operation in this area is limited by R (on 0 100 1000 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Maximun Safe Operating Area 6.4 =10V ...
Transistors 10000 f=1MHz = Ta=25°C Pulsed C iss 1000 C oss 100 C rss 10 0 100 1000 DRAIN SOURCE VOLTAGE : V (V) DS Fig.10 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C =100V V DD ...
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