RDN120N25FU6 Rohm Semiconductor, RDN120N25FU6 Datasheet
RDN120N25FU6
Specifications of RDN120N25FU6
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RDN120N25FU6 Summary of contents
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Transistors 10V Drive Nch MOS FET RDN120N25 Structure Silicon N-channel MOS FET Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching Packaging specifications Package Bulk Type Code Basic ordering unit (pieces) ...
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Transistors Electrical characteristics (Ta=25°C) Symbol Parameter Gate-Source Leakage V Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off ...
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Transistors Electrical characteristic curves 100 =25° Single Pulse 10 Operation in this area is limited by R (on 0 100 1000 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Maximun Safe Operating Area 6.4 =10V ...
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Transistors 10000 f=1MHz = Ta=25°C Pulsed C iss 1000 C oss 100 C rss 10 0 100 1000 DRAIN SOURCE VOLTAGE : V (V) DS Fig.10 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C =100V V DD ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...