IRFH5302TR2PBF International Rectifier, IRFH5302TR2PBF Datasheet - Page 2

MOSFET N-CH 30V 32A 5X6 PQFN

IRFH5302TR2PBF

Manufacturer Part Number
IRFH5302TR2PBF
Description
MOSFET N-CH 30V 32A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5302TR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.1 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
76nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 15V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PQFN, 8-PowerQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
100 W
Gate Charge Qg
29 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5302TR2PBFTR
Thermal Resistance
R
R
R
R
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
θJC
θJC
θJA
θJA
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
g
g
Q
Q
Q
Q
sw
oss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
(Bottom)
(Top)
(<10s)
/ΔT
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
Parameter
Parameter
gs2
+ Q
gd
)
g
g
Parameter
Time is dominated by parasitic Inductance
Min.
1.35
Min.
–––
–––
–––
–––
–––
–––
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
4400
Typ.
0.02
Typ.
–––
-6.8
–––
–––
–––
–––
–––
890
360
–––
–––
–––
1.8
2.8
1.8
7.7
4.4
9.7
8.2
1.6
76
29
14
19
18
51
22
18
20
32
100
Max. Units
Max. Units
-100
Typ.
2.35
–––
–––
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
400
2.1
3.5
5.0
2.5
1.0
41
30
48
h
V/°C
µA
nA
nC
nC
nC
pF
nC
ns
ns
V
V
S
Ω
A
V
Typ.
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
See Fig.17 & 18
V
V
I
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 300A/µs
–––
–––
–––
–––
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
G
GS
DS
= 50A
= 50A
=1.8Ω
= 25°C, I
= 25°C, I
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 16V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V, V
= 4.5V
= 15V, V
= 0V
GS
Max.
130
50
, I
D
D
S
F
D
D
= 250µA
Conditions
D
Conditions
GS
GS
GS
DS
GS
= 50A, V
= 50A, V
= 100µA
= 50A
= 50A
Max.
= 50A
1.2
= 0V
= 0V, T
= 15V, I
= 0V
15
35
22
= 4.5V
e
D
e
DD
GS
= 1mA
www.irf.com
J
D
= 125°C
= 0V
= 15V
= 50A
Units
G
mJ
Units
°C/W
A
e
D
S

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