IRFH5301TR2PBF International Rectifier, IRFH5301TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5301TR2PBF
• Description: MOSFET N-CH 30V 35A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5301TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.85 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 77nC @ 10V
• Input Capacitance (ciss) @ Vds: 5114pF @ 15V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 110 W
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5301TR2PBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
0.1
200
160
120
10
80
40
Fig 9. Maximum Drain Current Vs.
0.001
1
0
0.01
0.2
0.1
25
10
Case (Bottom) Temperature
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
V SD , Source-to-Drain Voltage (V)
0.4
50
T J = 150°C
T C , Case Temperature (°C)
D = 0.50
0.6
75
Limited By Package
0.05
0.01
0.20
0.10
0.02
1E-005
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
0.8
100
V GS = 0V
1.0
125
t 1 , Rectangular Pulse Duration (sec)
1.2
150
0.0001
0.001
10000
1000
Fig 10. Threshold Voltage Vs. Temperature
100
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0.10
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 1.0mA
ID = 250µA
ID = 100µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
T J , Temperature ( °C )
0.01
DS
0
1
(on)
25
50
10msec
100µsec
1msec
75 100 125 150
10
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0.1
100