IXTA3N100D2 IXYS, IXTA3N100D2 Datasheet

MOSFET N-CH 1000V 3A D2PAK

IXTA3N100D2

Manufacturer Part Number
IXTA3N100D2
Description
MOSFET N-CH 1000V 3A D2PAK
Manufacturer
IXYS
Datasheet

Specifications of IXTA3N100D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
5.5 Ohm @ 1.5A, 0V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
3A
Gate Charge (qg) @ Vgs
37.5nC @ 5V
Input Capacitance (ciss) @ Vds
1020pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vds, Max, (v)
1000
Id(on), Min, (a)
3
Rds(on), Max, (?)
5.5
Vgs(off), Max, (v)
-4.5
Ciss, Typ, (pf)
1020
Crss, Typ, (pf)
17
Qg, Typ, (nc)
37.5
Pd, (w)
125
Rthjc, Max, (ºc/w)
1
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2009 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-263
TO-220
Test Conditions
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
V
V
V
V
V
V
Test Conditions
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 1.5A, Note 1
= 250μA
= 250μA
GS
= 50V, Note 1
DS
= - 5V
= 0V
Preliminary Technical Information
T
J
= 125°C
IXTA3N100D2
IXTP3N100D2
- 2.5
- 55 ... +150
- 55 ... +150
Characteristic Values
Min.
1000
3
Maximum Ratings
1.13 / 10
1000
±20
±30
125
150
300
260
2.5
3.0
Typ.
±100 nA
- 4.5
Nm/lb.in.
Max.
5.5
50 μA
5 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D S
≤ ≤ ≤ ≤ ≤
=
>
G
D
Tab = Drain
S
5.5Ω Ω Ω Ω Ω
3A
1000V
= Drain
D (Tab)
D (Tab)
DS100184A(12/09)

Related parts for IXTA3N100D2

IXTA3N100D2 Summary of contents

Page 1

... DSX(off) DS DSX 0V 1.5A, Note 1 DS(on 0V 50V, Note 1 D(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Maximum Ratings 1000 ±20 ±30 125 - 55 ... +150 150 - 55 ... +150 300 260 1. 2.5 3.0 Characteristic Values Min. Typ. 1000 - 2 125°C ...

Page 2

... Characteristic Values Min. Typ. = 75° Characteristic Values Min. Typ. 0.8 970 12.7 6.16 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA3N100D2 IXTP3N100D2 TO-263 (IXTA) Outline Max Dim. Millimeter nC Min 4.06 b 0.51 b2 1.14 1.0 °C ...

Page 3

... J 1.E+ 3.25V 1.E+09 GS 1.E+08 - 3.50V - 3.75V 1.E+07 - 4.00V 1.E+06 1.E+05 - 4.25V 1.E+04 - 4.50V 1.E+03 700 800 900 1000 1100 1200 -4.6 IXTA3N100D2 IXTP3N100D2 Fig. 2. Extended Output Characteristics @ - Volts DS Fig. 4. Drain Current @ T 0 100 200 300 400 500 600 700 ...

Page 4

... I - Amperes D Fig. 12. Forward Voltage Drop of Intrinsic Diode -10V 125º 0.3 0.4 0.5 0.6 0 Volts SD IXTA3N100D2 IXTP3N100D2 = 1.5A Value 3.5 4.0 4.5 5.0 3.5 4 4 25ºC J 0.8 0.9 1.0 ...

Page 5

... DC 0.10 Fig. 17. Maximum Transient Thermal Impedance 0.01 1,000 10 Fig. 17. Maximum Transient Thermal Impedance . 0.001 0.01 Pulse Width - Seconds IXTA3N100D2 IXTP3N100D2 Fig. 14. Gate Charge V = 500V 1. 10mA NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75ºC ...

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