IXTA200N075T7 IXYS, IXTA200N075T7 Datasheet - Page 2

MOSFET N-CH 75V 200A TO-263-7

IXTA200N075T7

Manufacturer Part Number
IXTA200N075T7
Description
MOSFET N-CH 75V 200A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA200N075T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
430W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
200 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
T
I
I
V
t
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
S
SM
d(on)
d(off)
f
r
rr
fs
J
iss
oss
rss
thJC
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 25 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V, V
= 0 V
= 10 V, V
GS
D
DS
DS
GS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0.5 V
= 0 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 25 A
= 25 A
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
70
Characteristic Values
Characteristic Values
6800
1040
Typ.
Typ.
115
190
160
31
57
54
52
35
43
80
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.35 °C/W
200
540
1.0
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
ns
ns
S
V
A
A
TO-263 (7-lead) (IXTA 7) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
IXTA
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
6,727,585
6,759,692
6771478 B2
200N075T7
7,005,734 B2
7,063,975 B2
7,071,537

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