IXTA200N075T7 IXYS, IXTA200N075T7 Datasheet - Page 4

MOSFET N-CH 75V 200A TO-263-7

IXTA200N075T7

Manufacturer Part Number
IXTA200N075T7
Description
MOSFET N-CH 75V 200A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA200N075T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
430W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
200 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
300
270
240
210
180
150
120
350
300
250
200
150
100
100
90
60
30
50
0
0
0.4
3
0
f = 1 MHz
0.5
3.5
5
Fig. 9. Forward Voltage Drop of
0.6
10
4
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
Intrinsic Diode
4.5
V
15
T
V
0.8
V
J
GS
SD
= 150ºC
DS
- Volts
- Volts
- Volts
0.9
20
5
C oss
C rss
C iss
1
5.5
T
25
T
J
J
= - 40ºC
= 25ºC
150ºC
1.1
25ºC
30
6
1.2
6.5
35
1.3
1.4
40
7
1.00
0.10
0.01
160
140
120
100
10
80
60
40
20
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
D
G
DS
20
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
50
= 38V
0.001
Fig. 8. Transconductance
T
40
J
100
= - 40ºC
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
150ºC
G
25ºC
- NanoCoulombs
I
60
0.01
D
Impedance
IXTA
- Amperes
150
80
200
200N075T7
0.1
100
250
120
1
300
140
10
160
350

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